Aspect ratio independent etching of dielectrics
نویسندگان
چکیده
منابع مشابه
Aspect ratio independent etching of dielectrics
Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespectiv...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1997
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.119578